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2015•Applied Mechanics and MaterialsOpen access

Fabrication and High Temperature Characterization of 1200V-15A 4H-SIC JBS Diode

Ao Liu, Yong Hong Tao, Song Bai, Gang Chen, Ling Wang, Run Huang, Yun Li, Zhi Fei Zhao

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Abstract

1200V-15A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on SiC epitaxy and device technology. By adopting the proper SBD metal,optimized structures and fabrication process, we succeeded in achieving good balance between blocking voltage and on-resistance, especially at high temperature to 200°C. Furthermore, the fabricated diode have a fast recovery time of 30ns, and its dynamic characteristics are constant at high temperature.

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What this paper is about

1200V-15A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on SiC epitaxy and device technology. By adopting the proper SBD metal,optimized structures and fabrication process, we succeeded in achieving good balance between blocking voltage and on-resistance, especially at high temperature to 200°C. Furthermore, the fabricated diode have a fast recovery time of 30ns, and its dynamic characteristics are constant at high temperature.

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Available abstract

1200V-15A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on SiC epitaxy and device technology. By adopting the proper SBD metal,optimized structures and fabrication process, we succeeded in achieving good balance between blocking voltage and on-resistance, especially at high temperature to 200°C. Furthermore, the fabricated diode have a fast recovery time of 30ns, and its dynamic characteristics are constant at high temperature.

Key concepts: Fabrication, Materials science, Schottky diode, Diode, Optoelectronics, Schottky barrier, Voltage, Electrical engineering

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