Chip-level and package-level seamless interconnect technologies for advanced packaging
Shintaro Yamamichi, K. Mori, Katsumi Kikuchi, Hideya Murai, Daisuke Ohshima, Yoshiki Nakashima, K. Soejima, Masaya Kawano, Tomoo Murakami
Abstract
Shintaro Yamamichi, K. Mori, Katsumi Kikuchi, Hideya Murai, Daisuke Ohshima, Yoshiki Nakashima, K. Soejima, Masaya Kawano, Tomoo Murakami
Abstract
Package-process-oriented thick-Cu-wiring technologies have been developed for forming chip-level and package-level seamless interconnects between an LSI chip and the package substrate. Chip-level seamless interconnects are formed using a resin CMP process. Package-level seamless interconnects are formed by embedding a thinned chip into a resin on Cu base plate. A package with package-level seamless interconnects is thinner and has lower thermal resistance, better power delivery, and finer-pitch interconnects than a conventional flip-chip ball grid array package.
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Package-process-oriented thick-Cu-wiring technologies have been developed for forming chip-level and package-level seamless interconnects between an LSI chip and the package substrate. Chip-level seamless interconnects are formed using a resin CMP process. Package-level seamless interconnects are formed by embedding a thinned chip into a resin on Cu base plate. A package with package-level seamless interconnects is thinner and has lower thermal resistance, better power delivery, and finer-pitch interconnects than a conventional flip-chip ball grid array package.
Key concepts: Ball grid array, Package on package, Chip-scale package, Quad Flat No-leads package, Interconnection, Flip chip, Chip, Integrated circuit packaging