COMPARISON OF SECONDARY ION MASS SPECTROMETRY (SIMS) WITH ELECTRON MICROPROBE ANALYSIS (EPMA) AND OTHER THIN FILM ANALYTICAL METHODS
H. W. Werner, Andreas Rosenstiel
Abstract
H. W. Werner, Andreas Rosenstiel
Abstract
Different modes of SIMS for thin film analysis and the principle of SIMS will be discussed; this will be followed by a discussion of some features related to instrumentation: types of ion sources and their characteristics ; ion microprobe versus ion microscope ; special modes of SIMS : sputter neutral mass spectrometry (SNMS) and fast atom bombardment. (FAB). The discussion of analytical features will include : element range, quantitative analysis, depth profiling, two-dimensional and three-dimensional element mapping. Examples from different fields of application of SIMS will serve to illustrate these different features. In conclusion a comparison of SIMS with other thin film analytical methods will be given with the emphasis on electron microprobe analysis.
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Different modes of SIMS for thin film analysis and the principle of SIMS will be discussed; this will be followed by a discussion of some features related to instrumentation: types of ion sources and their characteristics ; ion microprobe versus ion microscope ; special modes of SIMS : sputter neutral mass spectrometry (SNMS) and fast atom bombardment. (FAB). The discussion of analytical features will include : element range, quantitative analysis, depth profiling, two-dimensional and three-dimensional element mapping. Examples from different fields of application of SIMS will serve to illustrate these different features. In conclusion a comparison of SIMS with other thin film analytical methods will be given with the emphasis on electron microprobe analysis.
Key concepts: Electron microprobe, Secondary ion mass spectrometry, Microprobe, Analytical Chemistry (journal), Mass spectrometry, Ion, Static secondary-ion mass spectrometry, Materials science