2003•Journal of Crystal GrowthRequires access

Effects of carrier gas on the stress of a-plane GaN films grown on r-plane sapphire substrates by metalorganic chemical vapor deposition

Dongsheng Li, Hongsong Chen, Haiming Yu, Yingjun Han, Xuan Zheng, Q. Huang, Jian Zhou

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Key concepts: Sapphire, Chemical vapor deposition, Metalorganic vapour phase epitaxy, Optoelectronics, Plane (geometry), Materials science, Stress (linguistics), Epitaxy

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Effects of carrier gas on the stress of a-plane GaN films grown on r-plane sapphire substrates by metalorganic chemical vapor deposition — Research Paper | ScholarLens