Brad A. Kramer, Robert John Weber
Abstract
The voltage dependence of the base–emitter diffusion capacitance in a single heterojunction GaAIAs/GaAs HBT is discussed. It is found that conventional transistor capacitance models are not accurate for these devices. An empirical expression is given which may be used to model this diffusion capacitance.
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The voltage dependence of the base–emitter diffusion capacitance in a single heterojunction GaAIAs/GaAs HBT is discussed. It is found that conventional transistor capacitance models are not accurate for these devices. An empirical expression is given which may be used to model this diffusion capacitance.
Key concepts: Heterojunction bipolar transistor, Capacitance, Common emitter, Diffusion capacitance, Optoelectronics, Materials science, Bipolar junction transistor, Heterojunction