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1993•Journal of Applied PhysicsOpen access

Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment

Jong-Lam Lee, Dojin Kim, Sung Jae Maeng, Hyung‐Ho Park, Jin Young Kang, Yong Tak Lee

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Abstract

A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

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What this paper is about

A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

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OpenAlex reports 64 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

Key concepts: MESFET, Field-effect transistor, Schottky barrier, Transistor, Optoelectronics, Breakdown voltage, Materials science, Schottky diode

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