Characteristics of W‐C‐N thin films on Si as a role of diffusion barrier for La0.67Sr0.33MnO3 manganese oxide layer

Abstract W‐C‐N ternary thin films are suggested as a diffusion barrier to prevent the interdiffusion between La0.67Sr0.33MnO3 (La‐Sr‐MnO) and Si substrate for adapting the Si process. La‐Sr‐MnO layers have grown on W‐C‐N/Si thin film by sol‐gel spinning processes and the thermal stabilities of W‐C‐N thin films with various nitrogen concentrations are studied during the annealing process up to 1000 °C. Experimental results show that the grain size of La‐Sr‐MnO layer depends on W‐C‐N diffusion barrier. From these results, the MR ratio of the La‐Sr‐MnO layer on the W‐C‐N films is higher than that of the La‐Sr‐MnO layer on the W‐C films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)