1989Sensors and ActuatorsRequires access

Hall Effect Devices

Rade S. Popovic

Open publisher page 357 citations

Abstract

After a short introduction to the operating principle and the basic characteristics of Hall devices, the most interesting recent advances in the field are reviewed. They include: better understanding of the influence of device geometry on sensor characteristics; results of research into parasitic and second-order effects, such as the piezo-Hall effect, non-linearity effects and surface effects, the last affecting device sensitivity, 1/f noise and offset; new designs and technologies, yielding buried Hall devices, vertical Hall devices and two-dimensional electron gas Hall devices; and new electronic methods for the improvement of sensor characteristics, such as correction of non-linearity effects and offset reduction.

About this research paper

What this paper is about

After a short introduction to the operating principle and the basic characteristics of Hall devices, the most interesting recent advances in the field are reviewed. They include: better understanding of the influence of device geometry on sensor characteristics; results of research into parasitic and second-order effects, such as the piezo-Hall effect, non-linearity effects and surface effects, the last affecting device sensitivity, 1/f noise and offset; new designs and technologies, yielding buried Hall devices, vertical Hall devices and two-dimensional electron gas Hall devices; and new electronic methods for the improvement of sensor characteristics, such as correction of non-linearity effects and offset reduction.

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Available abstract

After a short introduction to the operating principle and the basic characteristics of Hall devices, the most interesting recent advances in the field are reviewed. They include: better understanding of the influence of device geometry on sensor characteristics; results of research into parasitic and second-order effects, such as the piezo-Hall effect, non-linearity effects and surface effects, the last affecting device sensitivity, 1/f noise and offset; new designs and technologies, yielding buried Hall devices, vertical Hall devices and two-dimensional electron gas Hall devices; and new electronic methods for the improvement of sensor characteristics, such as correction of non-linearity effects and offset reduction.

Key concepts: Hall effect, Hall effect sensor, Thermal Hall effect, Semiconductor, Magnetic field, Quantum Hall effect, Condensed matter physics, Semiconductor device

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