Hall Effect Devices
Rade S. Popovic
Abstract
Rade S. Popovic
Abstract
After a short introduction to the operating principle and the basic characteristics of Hall devices, the most interesting recent advances in the field are reviewed. They include: better understanding of the influence of device geometry on sensor characteristics; results of research into parasitic and second-order effects, such as the piezo-Hall effect, non-linearity effects and surface effects, the last affecting device sensitivity, 1/f noise and offset; new designs and technologies, yielding buried Hall devices, vertical Hall devices and two-dimensional electron gas Hall devices; and new electronic methods for the improvement of sensor characteristics, such as correction of non-linearity effects and offset reduction.
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After a short introduction to the operating principle and the basic characteristics of Hall devices, the most interesting recent advances in the field are reviewed. They include: better understanding of the influence of device geometry on sensor characteristics; results of research into parasitic and second-order effects, such as the piezo-Hall effect, non-linearity effects and surface effects, the last affecting device sensitivity, 1/f noise and offset; new designs and technologies, yielding buried Hall devices, vertical Hall devices and two-dimensional electron gas Hall devices; and new electronic methods for the improvement of sensor characteristics, such as correction of non-linearity effects and offset reduction.
Key concepts: Hall effect, Hall effect sensor, Thermal Hall effect, Semiconductor, Magnetic field, Quantum Hall effect, Condensed matter physics, Semiconductor device