2005•Crystal Research and TechnologyRequires access

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

Z. R. Żytkiewicz, D. Dobosz, Yuanchu Liu, S. Dost

Abstract

Abstract The article presents a short review of recent developments in epitaxial lateral overgrowth (ELO) of thin layers of III‐V compound semiconductors by liquid phase epitaxy (LPE) and also by liquid phase electroepitaxy (LPEE). The focus is on the relative contributions of various transport processes involved in ELO toward the growth of high quality, dislocation free thin layers of semiconductors with large width/thickness ratios. Results of our experimental and modelling studies on lateral overgrowth by LPE are used as examples. Furthermore, the application of LPEE for lateral overgrowth of compound semiconductors, a new emerging area of ELO technology, is discussed, and some experimental and numerical results are presented. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

About this research paper

What this paper is about

Why it matters

OpenAlex reports 11 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Epitaxy, Semiconductor, Liquid phase, Compound semiconductor, Materials science, Dislocation, Semiconductor materials, Phase (matter)