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2010•Unpublished venueRequires access

Low temperature direct wafer to wafer bonding for 3D integration: Direct bonding, surface preparation, wafer-to-wafer alignment

G. Gaudin, G. Riou, Didier Landru, Catherine Tempesta, Ionut Radu, Mariam Sadaka, Kevin Winstel, Emily Kinser, R. Hannon

Open publisher page 18 citations

Abstract

In this paper the integration challenges related to oxide-oxide bonding for wafer-to-wafer stacking technology are discussed. Furthermore, interface defectivity, wafer-to-wafer alignment and bond strength data are presented.

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What this paper is about

In this paper the integration challenges related to oxide-oxide bonding for wafer-to-wafer stacking technology are discussed. Furthermore, interface defectivity, wafer-to-wafer alignment and bond strength data are presented.

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OpenAlex reports 18 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper the integration challenges related to oxide-oxide bonding for wafer-to-wafer stacking technology are discussed. Furthermore, interface defectivity, wafer-to-wafer alignment and bond strength data are presented.

Key concepts: Wafer, Wafer bonding, Die preparation, Materials science, Direct bonding, Wafer-scale integration, Wafer backgrinding, Anodic bonding

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