ScholarLens Back to search
2008•Semiconductor Science and TechnologyOpen access

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

Lu Lu, C. K. So, Congyong Zhu, Qilin Gu, Changshu Li, S. Fung, Gerhard M Brauer, W. Anwand, W. Skorupa, C. C. Ling

Open full text 10 citations

Abstract

The resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 cm to ∼10 6 cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm -2 , and to ∼10 9 cm as the fluence increased to ∼10 18 cm -2 .Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS).After the electron irradiation with a fluence of 10 18 cm -2 , the normalized TSC signal increased by a factor of ∼100.A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected.After annealing in air at 400 • C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

Open-access reader

About this research paper

What this paper is about

The resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 cm to ∼10 6 cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm -2 , and to ∼10 9 cm as the fluence increased to ∼10 18 cm -2 .Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS).After the electron irradiation with a fluence of 10 18 cm -2 , the normalized TSC signal increased by a factor of ∼100.A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected.After annealing in air at 400 • C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

Why it matters

OpenAlex reports 10 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

The resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 cm to ∼10 6 cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm -2 , and to ∼10 9 cm as the fluence increased to ∼10 18 cm -2 .Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS).After the electron irradiation with a fluence of 10 18 cm -2 , the normalized TSC signal increased by a factor of ∼100.A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected.After annealing in air at 400 • C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

Key concepts: Fluence, Irradiation, Annealing (glass), Vacancy defect, Electrical resistivity and conductivity, Electron beam processing, Analytical Chemistry (journal), Zinc

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Influence of electron irradiation on hydrothermally grown zinc oxide single crystals — Research Paper | ScholarLens