The effects of gate oxide short in 6-transistors SRAM cell

The effects of gate oxide short (GOS) in a single 6-MOS transistors SRAM cell are studied in this work, through SPICE simulation. Both uni-directional split model and bi-dimensional lumped-transistors model are used to model the GOS in NMOS for comparison. It is assumed that only one NMOS is defective at a time. TSMC 0.18/spl mu/m process parameters are used in the SPICE simulations. Interesting findings and results showed that GOS may leave catastrophic impacts on SRAM operations.