2005•Journal of Crystal GrowthRequires access

Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption

I. Friel, Kristina Driscoll, E. Kulenica, Mitra Dutta, Roberto Paiella, T. D. Moustakas

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Key concepts: Molecular beam epitaxy, Quantum well, Sapphire, Doping, Absorption (acoustics), Optoelectronics, Materials science, Relaxation (psychology)

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