1989Journal of The Electrochemical SocietyOpen access

A Comparison of Silicon Wafer Etching by KOH and Acid Solutions

L. D. Dyer, Gregory J. Grant, Charlotte M. Tipton, A. E. Stephens

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Abstract

etching was investigated as a means of removing damage in place of acid etching. It was found to have advantages over acid etching for both the wafer user and the producer. For the wafer user, offered better device yield, flatter wafers, better back‐side geometry, and the avoidance of metal plating. For the wafer producer, offered a safer, lower cost, more compact and environmentally conservative process, better temperature control, and a more uniform and consistent appearance. Detailed etch rates were established.

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etching was investigated as a means of removing damage in place of acid etching. It was found to have advantages over acid etching for both the wafer user and the producer. For the wafer user, offered better device yield, flatter wafers, better back‐side geometry, and the avoidance of metal plating. For the wafer producer, offered a safer, lower cost, more compact and environmentally conservative process, better temperature control, and a more uniform and consistent appearance. Detailed etch rates were established.

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Available abstract

etching was investigated as a means of removing damage in place of acid etching. It was found to have advantages over acid etching for both the wafer user and the producer. For the wafer user, offered better device yield, flatter wafers, better back‐side geometry, and the avoidance of metal plating. For the wafer producer, offered a safer, lower cost, more compact and environmentally conservative process, better temperature control, and a more uniform and consistent appearance. Detailed etch rates were established.

Key concepts: Wafer, Etching (microfabrication), Plating (geology), Materials science, Yield (engineering), Optoelectronics, SAFER, Reactive-ion etching

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