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A 150ns 288k CMOS EPROM with redundancy

Masahiro Yoshida, M. Higuchi, K. Miyasaka, K. Shirai, Iwao Tanaka

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Abstract

THE NEED FOR HIGH DENSITY AND HIGH PERFORMANCE CMOS EPROMs as program storage memories has increased in proportion to the development of microprocessor systems which use CMOS CPUs and CMOS peripheral devices to reduce power consumption. Until now, up to 64K CMOS EPROMs have been developed 1-2-3, but there has been a demand for denser CMOS EPROMs to store larger programs as systems become more sophisticated.

About this research paper

What this paper is about

THE NEED FOR HIGH DENSITY AND HIGH PERFORMANCE CMOS EPROMs as program storage memories has increased in proportion to the development of microprocessor systems which use CMOS CPUs and CMOS peripheral devices to reduce power consumption. Until now, up to 64K CMOS EPROMs have been developed 1-2-3, but there has been a demand for denser CMOS EPROMs to store larger programs as systems become more sophisticated.

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OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

THE NEED FOR HIGH DENSITY AND HIGH PERFORMANCE CMOS EPROMs as program storage memories has increased in proportion to the development of microprocessor systems which use CMOS CPUs and CMOS peripheral devices to reduce power consumption. Until now, up to 64K CMOS EPROMs have been developed 1-2-3, but there has been a demand for denser CMOS EPROMs to store larger programs as systems become more sophisticated.

Key concepts: CMOS, EPROM, Microprocessor, Redundancy (engineering), Power consumption, Computer science, Electrical engineering, Embedded system

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