1981•Journal of The Electrochemical SocietyRequires access

An X‐Ray Lithography System

W. D. Buckley, Greg P. Hughes

Abstract

A full field, short exposure time x‐ray lithography system which is capable of submicron lithography on silicon wafers is described. The optimum system configuration is determined and a new high flux x‐ray lithography source is identified. The overall system performance is summarized including resolution, exposure time, overlay capability, mask stability and technology, experimental x‐ray resist evaluation, and evaluation of source radiation effects on silicon MOS integrated circuits.

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Key concepts: Lithography, X-ray lithography, Resist, Wafer, Next-generation lithography, Extreme ultraviolet lithography, Materials science, Silicon