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2013•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Study of overlay in EUV/ArF mix and match lithography

Chin-Chou Kevin Huang, Lin Chua, KyungBae Hwang, Antonio Mani, Gino Marcuccilli, Bill Pierson, Ramkumar Karur-Shanmugam, John Charles Robinson, DongSub Choi, Michael Ferber, Klaus-Dieter Roeth, Lee Byounghoon, Inhwan Lee

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Abstract

In preparation for EUV lithography (EUVL) in high volume manufacturing, a preproduction ASML NXE:3100 step-and- scan system was used to assess overlay performance under mix-and-match between EUV and ArF lithography, which will be critical for the successful insertion of EUV lithography into high volume 1x node production. Overlay sources of variation associated with EUV were investigated, including mask pattern-placement error (PPE), scan direction, and processing order. Furthermore, this study also looks into overlay control strategy development specifically for EUV/ArF mix-and-match lithography. Systematic and random overlay components will be discussed, as well as possible overlay modeling and control options.

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What this paper is about

In preparation for EUV lithography (EUVL) in high volume manufacturing, a preproduction ASML NXE:3100 step-and- scan system was used to assess overlay performance under mix-and-match between EUV and ArF lithography, which will be critical for the successful insertion of EUV lithography into high volume 1x node production. Overlay sources of variation associated with EUV were investigated, including mask pattern-placement error (PPE), scan direction, and processing order. Furthermore, this study also looks into overlay control strategy development specifically for EUV/ArF mix-and-match lithography. Systematic and random overlay components will be discussed, as well as possible overlay modeling and control options.

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Available abstract

In preparation for EUV lithography (EUVL) in high volume manufacturing, a preproduction ASML NXE:3100 step-and- scan system was used to assess overlay performance under mix-and-match between EUV and ArF lithography, which will be critical for the successful insertion of EUV lithography into high volume 1x node production. Overlay sources of variation associated with EUV were investigated, including mask pattern-placement error (PPE), scan direction, and processing order. Furthermore, this study also looks into overlay control strategy development specifically for EUV/ArF mix-and-match lithography. Systematic and random overlay components will be discussed, as well as possible overlay modeling and control options.

Key concepts: Extreme ultraviolet lithography, Overlay, Lithography, Multiple patterning, Next-generation lithography, Computer science, Photolithography, Materials science

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