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Characterization of two step impact ionization and its influence in NMOS and PMOS VLSI's

J. Matsunaga, H.S. Momose, H. Iizuka, S. Kohyama

Open publisher page 26 citations

Abstract

Two step impact ionization phenomena near the high electric field drain region are characterized, both theoretically and experimentally, in small geometry NMOS and PMOS structures. Influences of primary and secondary impact ionized carrier flows are quantitatively considered as design constraints in high density MOS memories, more specifically for CMOS devices and also for poly-Si resistor load RAM cells.

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What this paper is about

Two step impact ionization phenomena near the high electric field drain region are characterized, both theoretically and experimentally, in small geometry NMOS and PMOS structures. Influences of primary and secondary impact ionized carrier flows are quantitatively considered as design constraints in high density MOS memories, more specifically for CMOS devices and also for poly-Si resistor load RAM cells.

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OpenAlex reports 26 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Two step impact ionization phenomena near the high electric field drain region are characterized, both theoretically and experimentally, in small geometry NMOS and PMOS structures. Influences of primary and secondary impact ionized carrier flows are quantitatively considered as design constraints in high density MOS memories, more specifically for CMOS devices and also for poly-Si resistor load RAM cells.

Key concepts: NMOS logic, PMOS logic, Impact ionization, Resistor, Ionization, Materials science, CMOS, Very-large-scale integration

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