Invited talk: Emerging magnetic memories

Summary form only. This talk will review emerging MRAM technologies, beginning with field-switched MRAMs that have been in product form for several years now, and extending to spin-torque MRAM under development now for higher density applications. Considerations for scaling to very small cell sizes will be discussed; in particular the importance of perpendicular magnetic anisotropy materials. Standard MRAM approaches involve the two-terminal magnetic tunnel junction device, that both stores the information and is used to read it out. A three-terminal magnetic device with potential advantages for speed will also be discussed, along with another approach dubbed "Racetrack" memory, which has the potential for three-dimensional shift-register like storage and very high densities.