A V-/W-band 0.18-μm CMOS phase shifter MMIC with 180°-300° phase tuning range
Yu‐Sheng Su, M.-C. Tsai, Jen-Chieh Wu, Ting-Yueh Chin, Chia‐Chan Chang
Abstract
Yu‐Sheng Su, M.-C. Tsai, Jen-Chieh Wu, Ting-Yueh Chin, Chia‐Chan Chang
Abstract
This letter presents the design and implementation of a continuous phase shifter MMIC using a 0.18-μm standard CMOS process. It consists of five stages of reflection-type phase shifter (RTPS), where each stage contains a over-coupling broadside coupler loaded with accumulation-mode MOSFET varactors. The measured maximum phase tuning range reaches 302° at 40 GHz and remains greater than 180° up to 100 GHz. Within 40-100 GHz, the average insertion loss is 13 dB, while the loss variation across the phase tuning range is ±4.3 dB at 40 GHz, and decreases to ± 2.5 dB at frequencies beyond 60 GHz. This chip has a compact size of 0.36×0.5 mm2and consumes zero DC power.
OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
This letter presents the design and implementation of a continuous phase shifter MMIC using a 0.18-μm standard CMOS process. It consists of five stages of reflection-type phase shifter (RTPS), where each stage contains a over-coupling broadside coupler loaded with accumulation-mode MOSFET varactors. The measured maximum phase tuning range reaches 302° at 40 GHz and remains greater than 180° up to 100 GHz. Within 40-100 GHz, the average insertion loss is 13 dB, while the loss variation across the phase tuning range is ±4.3 dB at 40 GHz, and decreases to ± 2.5 dB at frequencies beyond 60 GHz. This chip has a compact size of 0.36×0.5 mm2and consumes zero DC power.
Key concepts: Phase shift module, Monolithic microwave integrated circuit, CMOS, Phase (matter), Insertion loss, Electrical engineering, Materials science, Optoelectronics