1988•10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988.Requires access
V-band monolithic phase shifters
Cheng K. Pao, J. C. Chen, G.L. Lan, D.C. Wang, Wei-Ting Wong, M.I. Herman
Open publisher page 10 citations
Abstract
State-of-the-art V-band monolithic digital and analog phase shifters using FETs and varactor diodes have been developed. At 60 GHz, the single-bit FET and varactor branchline phase shifters achieved 129 degrees phase shift with less than 1.4-dB insertion loss and 54 degrees phase shift with less than 1.3-dB insertion loss, respectively. Four cascaded FET branchline phase shifters achieved 360 degrees phase shift in 22.5 degrees steps with insertion loss of 4.5 to 7.5 dB. Two cascaded varactor branchline phase shifters achieved 160 degrees continuous phase shift with insertion loss of 3.5 to 8.5 dB.>