2011•Unpublished venueRequires access
Photoconductive THz generation at 1.5 μm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers
R. J. B. Dietz, Marina Gerhard, J. Boettcher, H. Kuenzel, Martín Koch, B. Sartorius, Martin Schell
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Abstract
We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolayer structures with separated trapping and photoconductive layers, the later exhibiting high carrier mobility. The high mobility significantly increases the optical power-to-THz conversion efficiency, while the emitted THz bandwidth exceeds 3 THz.