1992•Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaRequires access

Photoemission study of low pressure chemical vapor deposited and reactively sputtered titanium nitride in W/TiN/Si

Sunil Kumar, D. Chopra, G. C. Moore Smith

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Abstract

Low-pressure chemical vapor deposited (LPCVD) tungsten has been deposited onto LPCVD grown and reactively sputtered titanium nitride (TiN) films. The x-ray photoelectron spectroscopy depth profiles and the chemical analysis suggest that the chemical interaction of TiN with W and with the Si/SiO2 substrates tends to be minimal.

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Key concepts: Titanium nitride, Chemical vapor deposition, Tin, X-ray photoelectron spectroscopy, Materials science, Titanium, Nitride, Tungsten