1996•Journal of Non-Crystalline SolidsRequires access

Importance of first layer thickness on TFT characteristics using a-Si:H deposited by 2-step process

Takeshi Kashiro, S. Kawamura, Nobuo Imai, Kaichi Fukuda, Kunio Matsumura, Nobuki Ibaraki

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Key concepts: Thin-film transistor, Amorphous silicon, Materials science, Oxide thin-film transistor, Layer (electronics), Amorphous solid, Silicon, Optoelectronics

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Importance of first layer thickness on TFT characteristics using a-Si:H deposited by 2-step process — Research Paper | ScholarLens