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2008•Applied Physics LettersOpen access

Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO

Masaki Nakano, T. Makino, Atsushi Tsukazaki, Kazunori Ueno, Akira Ohtomo, Tomoteru Fukumura, Hiroyuki Yuji, Shunsuke Akasaka, Kentaro Tamura, Ken Nakahara, Tetsuhiro Tanabe, Akira Kamisawa, M. Kawasaki

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Abstract

We report on a high performance visible-blind Schottky ultraviolet photodiode composed of a ZnO (0001) bulk single crystal and a transparent conducting polymer, poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), fabricated with a simple spin-coating process at room temperature in air. The quantum efficiency as high as unity in ultraviolet region and a visible rejection ratio of about 103 were achieved in the spectral response of the photodiode under zero-bias condition. The normalized detectivity of the photodiode was evaluated to be 3.6×1014 cm Hz1/2/W at 370 nm.

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We report on a high performance visible-blind Schottky ultraviolet photodiode composed of a ZnO (0001) bulk single crystal and a transparent conducting polymer, poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), fabricated with a simple spin-coating process at room temperature in air. The quantum efficiency as high as unity in ultraviolet region and a visible rejection ratio of about 103 were achieved in the spectral response of the photodiode under zero-bias condition. The normalized detectivity of the photodiode was evaluated to be 3.6×1014 cm Hz1/2/W at 370 nm.

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Available abstract

We report on a high performance visible-blind Schottky ultraviolet photodiode composed of a ZnO (0001) bulk single crystal and a transparent conducting polymer, poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), fabricated with a simple spin-coating process at room temperature in air. The quantum efficiency as high as unity in ultraviolet region and a visible rejection ratio of about 103 were achieved in the spectral response of the photodiode under zero-bias condition. The normalized detectivity of the photodiode was evaluated to be 3.6×1014 cm Hz1/2/W at 370 nm.

Key concepts: Photodiode, Ultraviolet, Optoelectronics, Materials science, Schottky diode, Quantum efficiency, Visible spectrum, Spin coating

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