Characterization of parasitics from scattering parameters of laser diode

Abstract A novel method for characterizing the parasitics of parasitic network is proposed based on the relations between the scattering parameters of a semiconductor laser chip and laser diode. Experiments are designed and performed using our method. The analysis results are in good agreement with the measurements. Furthermore, how the parasitics change with the parasitic element values are investigated. The method only needs reflection coefficient of laser diode to be measured, which is simple because of the developed electrical‐domain measurement techniques. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1–4, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22987