p-n junction formation in 3- and 4-inch indium gallium arsenide epitaxial wafers using a doped glass diffusion source

Summary form only given. Indium gallium arsenide (InGaAs) focal plane arrays (FPAs) are finding increasing use in diverse spectroscopic and imaging applications such as wavelength division multiplexing (WDM), night vision, and the differentiation of clear ice from water on aircraft surfaces and roadways. InGaAs optoelectronic devices are currently produced using epitaxial structures grown on 2-inch diameter indium phosphide (InP) substrates. High volumes and large die sizes (greater than 1/spl times/1 cm) are driving a demand for 3- and 4-inch wafers. We report a novel approach to the formation of the p-n junctions of InGaAs/InP p-i-n photodiodes.