Superatmospheric MOCVD Reactor Design for High Quality InGaN Growth

The MOCVD epitaxy technique is typically performed at sub-atmospheric pressures, however there is evidence suggesting that the crystalline quality of InGaN thin films could be improved by growing at super-atmospheric pressure. Toward this goal, computational fluid dynamics techniques have been used to design a vertical, rotating-susceptor MOCVD chamber capable of growth pressures up to 3 atm. Flow instabilities arising from the heated, rotating susceptor have been minimized by changing the shape of the transition curve of the reactor.