1998•Journal of The Electrochemical SocietyOpen access

Oxygen Solubilities in Si Melts: The Influence of Carbon Addition

Keisei Abe, Kazutaka Terashima, Takeshi Matsumoto, Susumu Maeda, Hideo Nakanishi, Keigo Hoshikawa

Abstract

We investigated the influence of carbon addition on oxygen solubilities in silicon melts. Oxygen concentration increases with increasing carbon concentration in silicon melts when melt temperatures are above 1470°C. The temperature dependence of oxygen concentration in carbon‐doped silicon melts is strong when carbon concentration is above 5.0 × 10 17 atoms/cm 3 . It is found that 87% of the oxygen atoms are related to carbon in carbon‐doped silicon melts when carbon concentration is 3.0 × 10 18 atoms/cm 3 and silicon melt temperature is 1500°C.

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Key concepts: Silicon, Carbon fibers, Oxygen, Doping, Limiting oxygen concentration, Materials science, Inorganic chemistry, Chemistry