Surface and bulk charge transport in a buried-layer MOS structure

The possibility of storing and moving charge Packets at the semiconductor surface, in addition to bulk charge packets being stored and transferred at some distance away from the semiconductor surface, in a buried-layer MOS structure, is investigated. A double-channel charge-coupled device is described and analysed, in which a buried channel is used to store and. transfer majority carriers within the semiconductor bulk, and a second channel is used to store and transport minority carriers at the semiconductor surface. The influence of signal charges being present in both channels is studied using a one-dimensional approach.