Computation of Carrier Concentration for Different Semiconductor Materials
Isha Sharma, Siddhanth Vinod, Anshik Jain, Mohit Kumar, Palanichamy Vimala, T. S. Arun Samuel
Abstract
Isha Sharma, Siddhanth Vinod, Anshik Jain, Mohit Kumar, Palanichamy Vimala, T. S. Arun Samuel
Abstract
Carrier concentration denotes the number of charge carriers per unit volume. Charge carriers involve equations concerning electrical conductivity as well as thermal conductivity. In this paper, the carrier concentration is calculated for intrinsic, n-type, and p-type semiconductors. The purpose of calculating carrier concentration is to find out the number of holes and electrons of different semiconductors at different temperatures and doping concentrations. This helped to analyze the properties of semiconductors. By looking at the properties one can decide the right application for the semiconductor.
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Carrier concentration denotes the number of charge carriers per unit volume. Charge carriers involve equations concerning electrical conductivity as well as thermal conductivity. In this paper, the carrier concentration is calculated for intrinsic, n-type, and p-type semiconductors. The purpose of calculating carrier concentration is to find out the number of holes and electrons of different semiconductors at different temperatures and doping concentrations. This helped to analyze the properties of semiconductors. By looking at the properties one can decide the right application for the semiconductor.
Key concepts: Semiconductor, Charge carrier, Doping, Materials science, Electron mobility, Electron, Conductivity, Semiconductor device