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2010•Unpublished venueRequires access

Integrated Si-LDMOS transistors for 11 GHz X-Band power amplifier applications

R. Sorge, A. Fischer, Andreas Mai, Peter Schley, Jens Schmidt, Ch. Wipf, R. Pliquett, Rainer Barth

Open publisher page 3 citations

Abstract

The integration of RF NLDMOS transistors into a 0.13 μm CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP's 130 nm SiGeC BiCMOS platform targeting 1 W X-Band power amplifiers for radar and satellite communication applications.

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What this paper is about

The integration of RF NLDMOS transistors into a 0.13 μm CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP's 130 nm SiGeC BiCMOS platform targeting 1 W X-Band power amplifiers for radar and satellite communication applications.

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Available abstract

The integration of RF NLDMOS transistors into a 0.13 μm CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP's 130 nm SiGeC BiCMOS platform targeting 1 W X-Band power amplifiers for radar and satellite communication applications.

Key concepts: LDMOS, Amplifier, Transistor, Electrical engineering, Materials science, Optoelectronics, Power-added efficiency, CMOS

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