2006•Unpublished venueRequires access

Non-Volatile Memory Technology-Today and Tomorrow

Chih-Yuan Lu, Tao‐Cheng Lu, Rich Liu

Open publisher page 25 citations

Abstract

Despite strong scaling limitations for both NOR and NAND flash memories, solutions to continue the Moore's law are also emerging. For NOR flash memory, 2-bit/cell NROM, BE-SONOS and phase-change chalcogenide memory show promise to scale below 35nm node. For NAND flash memory, new nitride storage devices such as TANOS and BE-SONOS are candidates for < 30 nm devices

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What this paper is about

Despite strong scaling limitations for both NOR and NAND flash memories, solutions to continue the Moore's law are also emerging. For NOR flash memory, 2-bit/cell NROM, BE-SONOS and phase-change chalcogenide memory show promise to scale below 35nm node. For NAND flash memory, new nitride storage devices such as TANOS and BE-SONOS are candidates for < 30 nm devices

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OpenAlex reports 25 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Despite strong scaling limitations for both NOR and NAND flash memories, solutions to continue the Moore's law are also emerging. For NOR flash memory, 2-bit/cell NROM, BE-SONOS and phase-change chalcogenide memory show promise to scale below 35nm node. For NAND flash memory, new nitride storage devices such as TANOS and BE-SONOS are candidates for < 30 nm devices

Key concepts: NAND gate, Non-volatile random-access memory, Non-volatile memory, Charge trap flash, Racetrack memory, Flash memory, Flash (photography), Computer memory

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