Non-Volatile Memory Technology-Today and Tomorrow
Chih-Yuan Lu, Tao‐Cheng Lu, Rich Liu
Abstract
Chih-Yuan Lu, Tao‐Cheng Lu, Rich Liu
Abstract
Despite strong scaling limitations for both NOR and NAND flash memories, solutions to continue the Moore's law are also emerging. For NOR flash memory, 2-bit/cell NROM, BE-SONOS and phase-change chalcogenide memory show promise to scale below 35nm node. For NAND flash memory, new nitride storage devices such as TANOS and BE-SONOS are candidates for < 30 nm devices
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Despite strong scaling limitations for both NOR and NAND flash memories, solutions to continue the Moore's law are also emerging. For NOR flash memory, 2-bit/cell NROM, BE-SONOS and phase-change chalcogenide memory show promise to scale below 35nm node. For NAND flash memory, new nitride storage devices such as TANOS and BE-SONOS are candidates for < 30 nm devices
Key concepts: NAND gate, Non-volatile random-access memory, Non-volatile memory, Charge trap flash, Racetrack memory, Flash memory, Flash (photography), Computer memory