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Carrier Dynamics in InGaAs/GaAs Quantum Dots

S. Marcinkevičius, R. León

Open publisher page 6 citations

Abstract

We report on time-resolved photoluminescence measurements of In0.5Ga0.5As/GaAs as-grown and intermixed quantum dots and quantum wells. At room temperature, carrier capture times as short as 2 ps have been observed in the quantum dot structures. It is found that intermixing reduces the carrier trapping time and the exciton lifetime. This ultrafast carrier capture and relaxation is discussed in terms of efficient carrier–carrier scattering and carrier tunnelling via interfacial defects.

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What this paper is about

We report on time-resolved photoluminescence measurements of In0.5Ga0.5As/GaAs as-grown and intermixed quantum dots and quantum wells. At room temperature, carrier capture times as short as 2 ps have been observed in the quantum dot structures. It is found that intermixing reduces the carrier trapping time and the exciton lifetime. This ultrafast carrier capture and relaxation is discussed in terms of efficient carrier–carrier scattering and carrier tunnelling via interfacial defects.

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Available abstract

We report on time-resolved photoluminescence measurements of In0.5Ga0.5As/GaAs as-grown and intermixed quantum dots and quantum wells. At room temperature, carrier capture times as short as 2 ps have been observed in the quantum dot structures. It is found that intermixing reduces the carrier trapping time and the exciton lifetime. This ultrafast carrier capture and relaxation is discussed in terms of efficient carrier–carrier scattering and carrier tunnelling via interfacial defects.

Key concepts: Quantum tunnelling, Quantum dot, Photoluminescence, Carrier lifetime, Exciton, Relaxation (psychology), Trapping, Materials science

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