1995•Electronics LettersRequires access

Physical model of threshold voltage in siliconMOS transistors including reverse short channel effect

H. Brut, A. Juge, G. Ghibaudo

Abstract

A physically based model for the MOSFET threshold voltage accounting for the reverse short channel effect is proposed. This threshold voltage model, which incorporates the inhomogeneous transverse and longitudinal doping profiles as well as the conventional charge sharing short channel effect, has been successfully tested on several submicronic technologies with various channel lengths.

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Key concepts: Reverse short-channel effect, Threshold voltage, MOSFET, Channel length modulation, Short-channel effect, Channel (broadcasting), Materials science, Overdrive voltage