1967•Japanese Journal of Applied PhysicsRequires access
Trap Density in Epitaxially Grown GaAs
Yoshitaka Furukawa, Kenji Kajiyama, Yasuo Seki, Kazuhiko Sugane
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Abstract
Trap Density in Epitaxially Grown GaAs Yoshitaka Furukawa, Kenji Kajiyama, Yasuo Seki et al. Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer Ray-Ming Lin, Fu-Chuan Chu, Atanu Das et al. Thermally enhanced threshold voltage shifts in amorphous In–Ga–Zn–O thin-film transistor Takashi Kojiri, Tokiyoshi Matsuda and Mutsumi Kimura Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Feng Qian, Du Kai, Li Yu-Kun et al. Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure Liu Sheng-Hou, Cai Yong, Gong Ru-Min et al. Characterization of Interface Charge in NbAlO/AlGaN/GaN MOSHEMT with Different NbAlO Thicknesses Feng Qian, Du Kai, Dai Bo et al. X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN HighElectron-Mobility Transistor