1987•physica status solidi (a)Requires access
Effect of Traps on the Shape of the Output Signal of Ionizing-Radiation Semiconductor Detectors
A. I. Kasiyan, A. G. Cheban, M. A. Cheban, I. Sur, Oleksandr Zakharchuk
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Abstract
The shape of the current pulse of semiconductor radiation detectors at irradiation by a rectangular pulse of ionizing radiation (by X-ray, for example) of finite duration is investigated under conditions of charge carrier trapping. Some peculiarities of the behaviour of the amplitude and current pulse trailing-edge time of detectors depending on trap parameters and the applied bias voltage is disclosed. Recommendations for choosing optimal parameters of semiconductor pulse detectors are given. The results of experimental examination of transient characteristics of X-ray radiation silicon detectors are reported for a wide temperature range and various bias voltages.