2002•Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physicsRequires access
Fabrication and Characteristics Analysis of SAW Filter Using Al 0.36 Ga 0.64 N Thin Film on Sapphire Substrate
Cheol‐Yeong Jang, Min‐Jung Park, Sun‐Yeol Ryu, Hyun‐Chul Choi, Jung‐Hee Lee, Yong‐Hyun Lee
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Abstract
The surface acoustic wave (SAW) characteristics of AlxGa1—xN thin films, such as velocity, electromechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss, were investigated. AlxGa1—xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of —51.20 ppm/°C were measured when the kh value was 0.078 and temperature ranged between —30 and 60 °C. k2 varied from 1.26% to 2.22%. The fabricated SAW filter exhibited good device performance with insertion loss of —33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 μm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.