2002•physica status solidi (a)Requires access

Decomposition and Uniformity of Material Gases in GaN MOVPE

Akira Hirako, Kazuhiro Ohkawa

Abstract

The characteristics of metalorganic vapor-phase epitaxy (MOVPE)-grown GaN layers have been compared with the chemical features of the gaseous phase during growth. The chemical features were evaluated by growth simulation. Two- and three-flow methods were used for GaN MOVPE. It was found both by growth and by simulation that the two-flow is superior to the three-flow method as regards uniformity and quality of the GaN layers.

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Key concepts: Metalorganic vapour phase epitaxy, Epitaxy, Decomposition, Materials science, Vapor phase, Flow (mathematics), Optoelectronics, Phase (matter)