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Analysis of channel noise and threshold voltage in sos-MOS transistors in the temperature range of 77–300 K

Antoine Touboul, D. Sodini, D. Rigaud, G. Lecoy

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Key concepts: Silicon on sapphire, Materials science, Silicon, Doping, Noise (video), Optoelectronics, Atmospheric temperature range, Transistor

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Analysis of channel noise and threshold voltage in sos-MOS transistors in the temperature range of 77–300 K — Research Paper | ScholarLens