Influence of implantation induced damage in sapphire upon improvement of crystalline quality of silicon on sapphire

Crystalline quality improvement of silicon on sapphire (SOS) was carried out using thermal regrowth following Si implantation at energies of 130 and 150 keV, where the projected range of Si corresponded to and exceeded the SOS film thickness, respectively. Under the latter implant condition, it has been shown from Rutherford backscattering spectrometry (RBS) measurements that damage in sapphire does not anneal out after annealing at 1000 °C. RBS and Hall measurements have revealed that the damage introduced into the sapphire during implantation limits the degree of improvement in crystallographic and electrical properties of SOS.