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1969•Applied Physics LettersRequires access

FORMATION OF EPITAXIAL β-SiC FILMS ON SAPPHIRE

I. H. Khan, Arthur J. Learn

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Abstract

Epitaxial β-SiC films have been formed on sapphire by chemical conversion of thin single-crystal Si-on-sapphire films. The conversion is obtained by reaction of C2H2 with Si within the temperature range 900–1200°C. It is observed that epitaxy persists up to a certain depth, beyond which film orientation degenerates. The growth morphology of the β-SiC films appears to be related to surface granularity of the Si films and differs from that observed for conversion of bulk Si.

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Epitaxial β-SiC films have been formed on sapphire by chemical conversion of thin single-crystal Si-on-sapphire films. The conversion is obtained by reaction of C2H2 with Si within the temperature range 900–1200°C. It is observed that epitaxy persists up to a certain depth, beyond which film orientation degenerates. The growth morphology of the β-SiC films appears to be related to surface granularity of the Si films and differs from that observed for conversion of bulk Si.

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Available abstract

Epitaxial β-SiC films have been formed on sapphire by chemical conversion of thin single-crystal Si-on-sapphire films. The conversion is obtained by reaction of C2H2 with Si within the temperature range 900–1200°C. It is observed that epitaxy persists up to a certain depth, beyond which film orientation degenerates. The growth morphology of the β-SiC films appears to be related to surface granularity of the Si films and differs from that observed for conversion of bulk Si.

Key concepts: Sapphire, Epitaxy, Materials science, Optoelectronics, Atmospheric temperature range, Thin film, Granularity, Crystal growth

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