1993•Applied Physics LettersRequires access

Effect of wire width variation on the conductance of a silicon quantum wire

Y. S. Tang, Gongjiu Jin, C.D.W. Wilkinson

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Abstract

The effect of wire width variation on the conductance of a 1 μm×30 nm silicon quantum wire has been studied. Both resonant tunneling features and conductance fluctuations superimposed on the quantized steps have been observed and explained by the existence of a step-wise constriction in the wire due to the nonideality in the fabrication process.

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What this paper is about

The effect of wire width variation on the conductance of a 1 μm×30 nm silicon quantum wire has been studied. Both resonant tunneling features and conductance fluctuations superimposed on the quantized steps have been observed and explained by the existence of a step-wise constriction in the wire due to the nonideality in the fabrication process.

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Available abstract

The effect of wire width variation on the conductance of a 1 μm×30 nm silicon quantum wire has been studied. Both resonant tunneling features and conductance fluctuations superimposed on the quantized steps have been observed and explained by the existence of a step-wise constriction in the wire due to the nonideality in the fabrication process.

Key concepts: Quantum wire, Conductance, Silicon, Quantum tunnelling, Condensed matter physics, Materials science, Fabrication, Quantum

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