Effect of wire width variation on the conductance of a silicon quantum wire
Y. S. Tang, Gongjiu Jin, C.D.W. Wilkinson
Abstract
Y. S. Tang, Gongjiu Jin, C.D.W. Wilkinson
Abstract
The effect of wire width variation on the conductance of a 1 μm×30 nm silicon quantum wire has been studied. Both resonant tunneling features and conductance fluctuations superimposed on the quantized steps have been observed and explained by the existence of a step-wise constriction in the wire due to the nonideality in the fabrication process.
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The effect of wire width variation on the conductance of a 1 μm×30 nm silicon quantum wire has been studied. Both resonant tunneling features and conductance fluctuations superimposed on the quantized steps have been observed and explained by the existence of a step-wise constriction in the wire due to the nonideality in the fabrication process.
Key concepts: Quantum wire, Conductance, Silicon, Quantum tunnelling, Condensed matter physics, Materials science, Fabrication, Quantum