2004•Unpublished venueRequires access

InP/InGaAs heterojunction phototransistors for optoelectronic receivers

P.A. Houston, John P. Helme, W. K. Ng, Chee Hing Tan

Abstract

A theoretical and experimental analysis of the performance of InP/InGaAs heterostructure phototransistors (HPT) has been carried out and comparisons made with avalanche photodiodes (APDs) and PIN-HBT photodetectors. Although the APDs are intrinsically faster, the HPT in travelling-wave form has demonstrated excellent responsivity and power handling capability.

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Available abstract

Key concepts: APDS, Avalanche photodiode, Responsivity, Optoelectronics, Heterojunction bipolar transistor, Photodetector, Heterojunction, Photodiode