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A Stochastic Model for NBTI-Induced LSI Degradation in Field

Yasuo Satô, Seiji Kajihara

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Abstract

Electronic systems that consist of various LSIs require very high reliability in field, however, physical degradation phenomena such as NBTI (Negative Bias Temperature Instability) make it difficult to keep reliability in field only by conventional manufacturing-based LSI testing. This paper proposes a stochastic model for NBTI-induced degradation in field and analyzes the effects of parameters that affect LSI failure rate by simulation. Quantitative discussions show a guideline for reliable design and test.

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What this paper is about

Electronic systems that consist of various LSIs require very high reliability in field, however, physical degradation phenomena such as NBTI (Negative Bias Temperature Instability) make it difficult to keep reliability in field only by conventional manufacturing-based LSI testing. This paper proposes a stochastic model for NBTI-induced degradation in field and analyzes the effects of parameters that affect LSI failure rate by simulation. Quantitative discussions show a guideline for reliable design and test.

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Available abstract

Electronic systems that consist of various LSIs require very high reliability in field, however, physical degradation phenomena such as NBTI (Negative Bias Temperature Instability) make it difficult to keep reliability in field only by conventional manufacturing-based LSI testing. This paper proposes a stochastic model for NBTI-induced degradation in field and analyzes the effects of parameters that affect LSI failure rate by simulation. Quantitative discussions show a guideline for reliable design and test.

Key concepts: Negative-bias temperature instability, Reliability engineering, Reliability (semiconductor), Degradation (telecommunications), Field (mathematics), Computer science, Electronic engineering, Engineering

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