The Study on the Variation of NBTI Degradation in highly-scaled FinFET technology

In this paper, the variation of Negative bias temperature instability (NBTI) degradation is investigated comprehensively in highly-scaled FinFET technology. We analysis the effect of Gm degradation variation and Vt shift variation. The NBTI induced variation of Vt shift and Gm degradation shows increase trend with gate oxide area and the variation models are given. The contribution of Vt shift and Gm degradation variability on the Id degradation variability is also analyzed. This work help designers to improve the circuit in lifetime reliability.