Anti-weak localization of the two dimensional electron gas in modulation-doped Al/sub x/Ga/sub 1-x/N/GaN single quantum well

The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al/sub 0.22/Ga/sub 0.78/N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time /spl tau//sub e/, dephasing time /spl tau//sub /spl phi// and spin-orbit(s-o) scattering time /spl tau//sub so/ at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.