2005Chinese Physics LettersOpen access

Fabrication and Investigation of an Upconversion Quantum-Well Infrared Photodetector Integrated with a Light-Emitting Diode

Honglou Zhen, Ning Li, Xiong Da-Yuan, Zhou Xu-chang, Lu Wei, Liu Hui-chun

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Abstract

We report the fabrication of an upconversion infrared detector, i.e. a quantum well infrared photodetector integrated with a light-emitting diode (named as QWIP-LED). The infrared photo-response spectrum in the upconversion process is in good agreement with the normal photocurrent spectrum of the QWIP, which demonstrates that the long wavelength infrared band at 8 μm has been transferred to the near infrared band at 0.8 μm by the upconversion process.

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We report the fabrication of an upconversion infrared detector, i.e. a quantum well infrared photodetector integrated with a light-emitting diode (named as QWIP-LED). The infrared photo-response spectrum in the upconversion process is in good agreement with the normal photocurrent spectrum of the QWIP, which demonstrates that the long wavelength infrared band at 8 μm has been transferred to the near infrared band at 0.8 μm by the upconversion process.

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Available abstract

We report the fabrication of an upconversion infrared detector, i.e. a quantum well infrared photodetector integrated with a light-emitting diode (named as QWIP-LED). The infrared photo-response spectrum in the upconversion process is in good agreement with the normal photocurrent spectrum of the QWIP, which demonstrates that the long wavelength infrared band at 8 μm has been transferred to the near infrared band at 0.8 μm by the upconversion process.

Key concepts: Photon upconversion, Quantum well infrared photodetector, Optoelectronics, Infrared, Photodetector, Materials science, Fabrication, Photocurrent

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