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Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks

Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota

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Abstract

We fabricated ultrathin HfO2gate stacks of very high permittivity by atomic layer deposition (ALD) and novel two-step post-deposition annealing (PDA) technique. First, no-cap PDA degasses residual contaminations in ALD layer, and second, Ti-cap PDA enhances permittivity of HfO2by generating cubic crystal phase without SiO2interfacial layer growth. Using these techniques, the dielectric constant of the ALD-HfO2can be enhanced to ~40, and a 0.3 nm equivalent oxide thickness is obtained.

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What this paper is about

We fabricated ultrathin HfO2gate stacks of very high permittivity by atomic layer deposition (ALD) and novel two-step post-deposition annealing (PDA) technique. First, no-cap PDA degasses residual contaminations in ALD layer, and second, Ti-cap PDA enhances permittivity of HfO2by generating cubic crystal phase without SiO2interfacial layer growth. Using these techniques, the dielectric constant of the ALD-HfO2can be enhanced to ~40, and a 0.3 nm equivalent oxide thickness is obtained.

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Available abstract

We fabricated ultrathin HfO2gate stacks of very high permittivity by atomic layer deposition (ALD) and novel two-step post-deposition annealing (PDA) technique. First, no-cap PDA degasses residual contaminations in ALD layer, and second, Ti-cap PDA enhances permittivity of HfO2by generating cubic crystal phase without SiO2interfacial layer growth. Using these techniques, the dielectric constant of the ALD-HfO2can be enhanced to ~40, and a 0.3 nm equivalent oxide thickness is obtained.

Key concepts: Dielectric, Atomic layer deposition, Annealing (glass), High-κ dielectric, Permittivity, Materials science, Gate dielectric, Equivalent oxide thickness

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