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2011•Unpublished venueRequires access

4H-SiC SOI-MESFET with a step in buried oxide for improving electrical performance

Hamid Amini Moghadam, Ali A. Orouji, Seyed Ehsan Jamali Mahabadi

Open publisher page 4 citations

Abstract

This paper introduces a novel 4H-SiC SOI-MESFET with a step in buried oxide (SSOI-MESFET) for improving breakdown voltage. We investigate the improvement in device performance with two-dimensional and two-carrier device simulation. Our simulation results show that breakdown voltage of SSOI-MESFET is higher than conventional Bulk-MESFET (CB-MESFET) and conventional 4H-SiC SOI-MESFET (CSOI-MESFET). In this study we have shown that saturation current of the proposed structure is higher than CB-MESFET.

About this research paper

What this paper is about

This paper introduces a novel 4H-SiC SOI-MESFET with a step in buried oxide (SSOI-MESFET) for improving breakdown voltage. We investigate the improvement in device performance with two-dimensional and two-carrier device simulation. Our simulation results show that breakdown voltage of SSOI-MESFET is higher than conventional Bulk-MESFET (CB-MESFET) and conventional 4H-SiC SOI-MESFET (CSOI-MESFET). In this study we have shown that saturation current of the proposed structure is higher than CB-MESFET.

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper introduces a novel 4H-SiC SOI-MESFET with a step in buried oxide (SSOI-MESFET) for improving breakdown voltage. We investigate the improvement in device performance with two-dimensional and two-carrier device simulation. Our simulation results show that breakdown voltage of SSOI-MESFET is higher than conventional Bulk-MESFET (CB-MESFET) and conventional 4H-SiC SOI-MESFET (CSOI-MESFET). In this study we have shown that saturation current of the proposed structure is higher than CB-MESFET.

Key concepts: MESFET, Materials science, Silicon on insulator, Optoelectronics, Breakdown voltage, Voltage, Electronic engineering, Electrical engineering

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